PART |
Description |
Maker |
MBR10200CT |
10 Amp High Voltage Power Schottky Barrier Rectifier 200 Volt
|
Kersemi Electronic Co.,...
|
V54C365164VL |
HIGH PERFORMANCE 225/200/166/143 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16
|
Mosel Vitelic
|
V54C365324V |
200/183/166/143 MHz 3.3 VOLT ULTRA HIGH PERFORMANCE 2M X 32 SDRAM 4 BANKS X 512Kbit X 32
|
MOSEL[Mosel Vitelic, Corp] Mosel Vitelic Corp
|
V54C365164VD V54C365164 |
HIGH PERFORMANCE 225/200/166/143 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16
|
MOSEL[Mosel Vitelic, Corp]
|
LME49710 |
High Performance, High Fidelity Audio Operational Amplifier
|
http://
|
SM5847AF SM5847 |
High-fidelity Digital Audio/ Multi-function Digital Filter High-fidelity Digital Audio, Multi-function Digital Filter
|
NPC[Nippon Precision Circuits Inc]
|
2SC2429 |
SILICON HIGH SPEED TRIPLE DIFFUSED NPN POWER TRANSISTOR 10 AMP,400 VOLT From old datasheet system SILICON HIGH SPPED POWER TRANSISTORS 高硅SPPED功率晶体
|
Fujitsu Component Limited. Fujitsu Microelectronics Fujitsu Media Devices Limited Toshiba Semiconductor Fujitsu Limited Fujitsu, Ltd.
|
LA72648M |
SPECIALTY CONSUMER CIRCUIT, PQFP80 TV, VCR, and Video Camera Applications: PAL high-fidelity audio signal recording and playback
|
SANYO SEMICONDUCTOR CO LTD
|
HH-108 HH-108SMA HH-108BNC |
200 kHz-35 MHz,high-power hybrid lunction HIGH-POWER HYBRID JUNCTION 200 KHZ - 35 MHZ
|
MA-Com MACOM[Tyco Electronics]
|
ARF466FL ARF466FL10 |
RF MOSFET for 100-300 Volt Operation; P(out) (W): 300; fO (MHz): 45; VDD (V): 200; BVDSS (V): 1000; RqJC (ºC/Watt): 0.27; Case Style: T2; COO: A-E VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
|
Microsemi, Corp. Microsemi Corporation
|
JX2N7227 JV2N7227 2N7227 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 400 Volt 0.315 Ohm
|
Advanced Power Technolo... http:// ADPOW[Advanced Power Technology]
|